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| IGBT MODULE MBN400C33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. (delta Tc=70C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to low input 33.4 E E G C 2-M8 2-M4 4-5.8 capacitance MOS gate. *High reliability,high durability module. * Isolated head sink (terminal to base). TERMINALS Weight: 720 (g) ABSOLUTE MAXIMUM RATINGS (Tc=25C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit V V A A W C C VRMS N.m MBN400C33A 3,300 20 400 800 400 800 4,000 -40 ~ +125 -40 ~ +125 5,400(AC 1 minute) 2/10 2.8 DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Terminals(M4/M8) Screw Torque Mounting(M5) (1) (2) Notes: (1)Recommended Value 1.80.2/91N.m (2)Recommended Value 2.60.2N.m CHARACTERISTICS Item (Tc=25C ) Symbol I CES IGES VCE(sat) VGE(TO) Cies tr ton tf toff VFM trr Unit mA nA V V nF Min. 4.0 - Typ. 4.5 5.5 50 1.6 2.3 2.1 3.4 3.0 0.5 Max. 4.0 200 5.5 7.0 2.6 3.2 2.8 5.3 4.0 0.9 Test Conditions Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector Emitter Saturation Voltage Gate Emitter Threshold Voltage Input Capacitance Rise Time Turn On Time Switching Times Fall Time Turn Off Time Peak Forward Voltage Drop Reverse Recovery Time VCE=3,300V,VGE=0V VGE=20V,VCE=0V IC=400A,VGE=15V VCE=10V, IC =400mA VCE=10V,VGE=0V,f=100KHz VCC=1,650V,Ic=400A ms L=150nH RG=10W (3) VGE=15V Tc=125C -Ic=400A,VGE=0V V ms Vcc=1,650V,-Ic=400A,L=150nH, Tc=125C (4) C/W Thermal Impedance IGBT Rth(j-c) 0.025 Junction to case FWD Rth(j-c) 0.05 Notes:(3) RG value is the test condition's value for decision of the switching times, not recommended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. (4) Counter arm IGBT VGE=-15V PDE-N400C33A-0 1000 Tc=25C TYPICAL 1000 Tc=125C TYPICAL 15V 14V13V 12V 11V 15V 14V 13V 12V Collector Current, Ic (A) Collector Current, Ic (A) 11V 10V 500 500 10V 9V 9V 8V 8V 7V 7V 0 0 2 4 6 8 10 0 0 2 4 6 8 10 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage 1000 VGE=0 Tc=25C Tc=125C TYPICAL Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage 1000 TYPICAL Cies Forward Current, IC (A) Cies, Coes, Cres(nF) 10 500 Coes Cres 1 Tc=25C 0 0 1 2 3 4 5 0.1 0.1 1 10 100 Forward Voltage, VF (V) Forward voltage of free-wheeling diode 4 TYPICAL [Conditions] VCC=1650V,Tc=125C VGE=15V,RG=10 Lp150nH Inductive Load 1 Collector to Emitter Voltage, VCE (V) Capacitance vs. Collector to Emitter Voltage TYPICAL [Conditions] VCC=1650V,Tc=125C VGE=15V,RG=10 Lp150nH Inductive Load full Switching Time, td(on), tr, td(off), tf,trr (s) 0.8 Turn-on Loss Eon (J/pulse) 3 10% 0.6 2 tf tr td(off) 0.4 1 td(on) trr 0.2 0 0 100 200 300 400 500 0 0 100 200 300 400 500 Collector Current, IC(A) Switching time vs. Collector current Collector Current IC (A) Turn-on Loss vs. Collector Current PDE-N400C33A-0 1 [Conditions] VCC=1650V,Tc=125C VGE=15V,RG=10 Lp150nH Inductive Load TYPICAL 1 [Conditions] VCC=1650V,Tc=125C VGE=15V,RG=10 Lp150nH Inductive Load TYPICAL Reverse Recovery Loss Err (J/pulse) 0.8 0.8 Turn-off Loss Eoff (J/pulse) 0.6 full 10% 0.6 full 0.4 0.4 10% 0.2 0.2 0 0 100 200 300 400 500 0 0 100 200 300 400 500 Collector Current IC (A) Turn-off Loss vs. Collector Current Collector Current IC (A) Reverse Recovery Loss vs. Collector Current PDE-N400C33A-0 HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives which is located "Inquiry" portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse |
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